Microstructural and conductivity changes induced by annealing of ZnO:B thin films deposited by chemical vapour deposition

Journal of Physics Condensed Matter

Volumn 23, Issue 33, 2011, Pages

  David, C ^a,b   Girardeau, T ^a   Paumier, F ^a   Eyidi, D ^a   Lacroix, B ^c   Papathanasiou, N ^b   Tinkham, B P ^b   Guerin P ^a   Marteau, M ^a  

^a UNIVERSITÉ DE POITIERS   (France)

^b Inventux Technologies AG   (Germany)

^c Direction de la Recherche Fondamentale   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CHEMICAL VAPOUR DEPOSITION; CONDUCTIVITY CHANGES; DOPED ZNO; FILM CONDUCTIVITY; HIGHER TEMPERATURES; IN-SITU XRD; INFRARED RANGE; LOW PRESSURE CHEMICAL VAPOUR DEPOSITIONS; LOW-PRESSURE CONDITIONS; MICRO-STRUCTURAL; MICROSTRUCTURAL MODIFICATION; SI(1 0 0); STRUCTURAL EVOLUTION; TECHNOLOGICAL APPLICATIONS; TRANSPARENT ELECTRODE; VACUUM-ANNEALING; ZNO; ZNO FILMS;

ANNEALING; ATMOSPHERIC TEMPERATURE; BORON; CARRIER CONCENTRATION; CARRIER MOBILITY; CHEMICAL MODIFICATION; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DEPOSITION; ELECTRIC PROPERTIES; GRAIN BOUNDARIES; METALLIC FILMS; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE;

OXIDE FILMS;

BORON; ZINC OXIDE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; MATERIALS TESTING; SURFACE PROPERTY; VOLATILIZATION; X RAY DIFFRACTION;

BORON; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; MATERIALS TESTING; SURFACE PROPERTIES; VOLATILIZATION; X-RAY DIFFRACTION; ZINC OXIDE;

EID: 80051938473     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/23/33/334209     Document Type: Article

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