|
Volumn 26, Issue 4, 2008, Pages 692-696
|
Effects of hydrogen ambient and film thickness on ZnO:Al properties
|
Author keywords
[No Author keywords available]
|
Indexed keywords
(PL) PROPERTIES;
ANNEALING EXPERIMENTS;
DOPED FILMS;
DOPING LEVELS;
IONIZED IMPURITY SCATTERING (IIS);
RF MAGNETRON SPUTTERING;
SCATTERING MECHANISMS;
SPUTTERING AMBIENT;
SUBSTRATE TEMPERATURE (ST);
TEMPERATURE DEPENDENT HALL MEASUREMENTS;
TEMPERATURE PROGRAMMED DESORPTION (TPD);
ZNO LATTICE;
ALUMINUM;
ANNEALING;
ARGON;
DESORPTION;
FILM THICKNESS;
HYDROGEN;
MOLECULAR BEAM EPITAXY;
OZONE WATER TREATMENT;
SCATTERING;
SEMICONDUCTING ZINC COMPOUNDS;
STRUCTURAL ANALYSIS;
TEMPERATURE PROGRAMMED DESORPTION;
ZINC ALLOYS;
ZINC OXIDE;
MAGNETRON SPUTTERING;
|
EID: 46449093304
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.2891261 Document Type: Article |
Times cited : (23)
|
References (25)
|