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Volumn 517, Issue 10, 2009, Pages 3134-3137
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Effect of thermal annealing on electrical properties of transparent conductive Ga-doped ZnO films prepared by ion-plating using direct-current arc discharge
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Author keywords
Annealing; GZO; Segregation; TCO; Thermal desorption
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Indexed keywords
ANNEALING;
ATMOSPHERIC PRESSURE;
CARRIER CONCENTRATION;
DOPING (ADDITIVES);
ELECTRIC PROPERTIES;
GALLIUM ALLOYS;
GRAIN BOUNDARIES;
SEGREGATION (METALLOGRAPHY);
SEMICONDUCTING ZINC COMPOUNDS;
SURFACE CHEMISTRY;
THERMAL DESORPTION;
ZINC;
ZINC OXIDE;
ANNEALING TEMPERATURES;
ARC DISCHARGES;
DIRECT CURRENTS;
ELECTRICAL PROPERTIES;
GA DOPANTS;
GA-DOPED ZNO;
GLASS SUBSTRATES;
GRAIN-BOUNDARY SEGREGATIONS;
GZO;
HIGH PURITIES;
ION PLATINGS;
SEGREGATION;
TCO;
TEMPERATURE RANGES;
THERMAL-ANNEALING;
TRANSPARENT CONDUCTIVE;
CONDUCTIVE FILMS;
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EID: 61449233171
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2008.11.081 Document Type: Article |
Times cited : (47)
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References (19)
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