메뉴 건너뛰기




Volumn 517, Issue 10, 2009, Pages 3134-3137

Effect of thermal annealing on electrical properties of transparent conductive Ga-doped ZnO films prepared by ion-plating using direct-current arc discharge

Author keywords

Annealing; GZO; Segregation; TCO; Thermal desorption

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; GALLIUM ALLOYS; GRAIN BOUNDARIES; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING ZINC COMPOUNDS; SURFACE CHEMISTRY; THERMAL DESORPTION; ZINC; ZINC OXIDE;

EID: 61449233171     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.11.081     Document Type: Article
Times cited : (47)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.