Influence of thermal annealing on electrical and optical properties of Ga-doped ZnO thin films

Thin Solid Films

Volumn 518, Issue 5, 2009, Pages 1386-1389

  Makino, Hisao ^a   Yamamoto, Naoki ^a   Miyake, Aki ^a   Yamada, Takahiro ^a   Hirashima, Yoshinori ^b   Iwaoka, Hiroaki ^b   Itoh, Takahiro ^b   Hokari, Hitoshi ^c   Aoki, Hisashi ^c   Yamamoto, Tetsuya ^a  

^a KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b Geomatec Co Ltd   (Japan)

^c CASIO   (Japan)

Author keywords

Ga doped ZnO; Optical mobility; Thermal stability; Transparent conductive oxide; ZnO:Ga

Indexed keywords

GA-DOPED ZNO; OPTICAL MOBILITY; THERMAL STABILITY; TRANSPARENT CONDUCTIVE OXIDE; ZNO:GA;

ANNEALING; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; HALL MOBILITY; ION IMPLANTATION; LIGHT TRANSMISSION; MAGNETRONS; OPTICAL PROPERTIES; PLATING; SEMICONDUCTING ZINC COMPOUNDS; THERMODYNAMIC STABILITY; ZINC OXIDE;

GALVANOMAGNETIC EFFECTS;

EID: 70449473964     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.093     Document Type: Article

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