Effects of annealing in a partially reducing atmosphere on sputtered Al-Doped ZnO thin films

Journal of Electronic Materials

Volumn 38, Issue 8, 2009, Pages 1568-1573

  Lennon, C ^a   Tapia, R B ^a   Kodama, R ^a   Chang, Y ^a   Sivananthan, S ^a   Deshpande, M ^b  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b AMSENG Inc   (United States)

Author keywords

RF magnetron sputtering; Transparent conducting oxides; Zinc oxide

Indexed keywords

AL-DOPED ZNO; ALUMINUM-DOPED ZNO; ANNEALED FILMS; DEPOSITED LAYER; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL RESISTIVITY; HEXAGONAL WURTZITE STRUCTURE; OPTICAL TRANSMITTANCE; OXYGEN DEFICIENT; POLYCRYSTALLINE; POST-DEPOSITION ANNEAL; QUARTZ SUBSTRATE; RADIO FREQUENCY MAGNETRON SPUTTERING; REDUCING ATMOSPHERE; RF MAGNETRON SPUTTERING; ROOM TEMPERATURE; TRANSPARENT CONDUCTING OXIDES; ZNO;

ALUMINA; ALUMINUM; AMORPHOUS FILMS; ANNEALING; CRYSTALLITE SIZE; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; LIGHT TRANSMISSION; MAGNETRON SPUTTERING; MAGNETRONS; OPTICAL PROPERTIES; OXIDE MINERALS; OXYGEN; OXYGEN VACANCIES; QUARTZ; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE; ZINC SULFIDE;

OPTICAL FILMS;

EID: 68749084618     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0747-x     Document Type: Conference Paper

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