Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects

Solid-State Electronics

Volumn 63, Issue 1, 2011, Pages 158-162

  Zaka, A ^a,b   Singer, J ^b   Dornel, E ^c   Garetto, D ^c   Rideau, D ^a   Rafhay, Q ^b   Clerc, R ^b   Manceau, J P ^c   Degors, N ^c   Boccaccio, C ^a   Tavernier, C ^a   Jaouen, H ^a  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

^c IBM   (France)

Author keywords

3D TCAD simulation; Corner effect; Non volatile memory; NVM optimization; STI geometry

Indexed keywords

CORNER EFFECTS; NON-VOLATILE MEMORY; NVM OPTIMIZATION; STI GEOMETRY; TCAD SIMULATION;

OPTIMIZATION; SEMICONDUCTING SILICON; THREE DIMENSIONAL;

THREE DIMENSIONAL COMPUTER GRAPHICS;

EID: 80051783888     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.05.017     Document Type: Article

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