Novel capacitance coupling coefficient measurement methodology for floating gate nonvolatile memory devices

IEEE Electron Device Letters

Volumn 26, Issue 7, 2005, Pages 507-509

  Duane, Russell ^a   Beug, M Florian ^a   Mathewson, Alan ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Body effect; Capacitance coupling coefficient; Nonvolatile memory devices

Indexed keywords

CAPACITANCE MEASUREMENT; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE; VOLTAGE MEASUREMENT;

BODY EFFECT; CAPACITANCE COUPLING COEFFICIENT; FLOATING GATE MEMORY CELLS; NONVOLATILE MEMORY DEVICES;

SEMICONDUCTOR STORAGE;

EID: 22944437402     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.851171     Document Type: Article

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