Simulation of NOR-flash memory cells focusing on narrow channel effects on VTH dispersion

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2006, Pages 127-130

  Kondo, Masaki ^a   Nakauchi, Takahiro ^a   Ito, Sanae ^a   Aoki, Nobutoshi ^a   Nakamura, Mitsutoshi ^a   Naruke, Kiyomi ^a   Ishiuchi, Hidemi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

3D simulation; F N tunneling current; Flash memory; Narrow channel effect; Threshold voltage dispersion

Indexed keywords

COMPUTER SIMULATION; DISPERSION (WAVES); SHAPE MEMORY EFFECT; THRESHOLD VOLTAGE;

CHANNEL EFFECTS; REALISTIC DEVICE SHAPE;

FLASH MEMORY;

EID: 42549167583     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2006.282854     Document Type: Conference Paper

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