Edge profile effect of tunnel oxide on erase threshold-voltage distributions in flash memory cells

IEEE Transactions on Electron Devices

Volumn 53, Issue 12, 2006, Pages 3012-3018

  Kim, Bomsoo ^b   Kwon, Wook Hyun ^a,c   Baek, Chang Ki ^b   Son, Younghwan ^b   Park, Chan Kwang ^a,c   Kim, Kinam ^a,c   Kim, Dae M ^b  

^a IEEE

^b Korea Institute for Advanced Study   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

Capacitive coupling equation with offset voltage; Edge profile effect; Erase threshold voltage distribution; Flash electrically erasable programmable read only memory (EEPROM) cell

Indexed keywords

COMPUTER SIMULATION; FLASH MEMORY; ROM; THRESHOLD VOLTAGE; VOLTAGE DISTRIBUTION MEASUREMENT;

CAPACITIVE COUPLING EQUATION WITH OFFSET VOLTAGE; EDGE PROFILE EFFECTS; ERASE THRESHOLD VOLTAGE DISTRIBUTION; FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EEPROM) CELL;

TUNNEL DIODES;

EID: 33947221560     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.885101     Document Type: Article

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