On the influence of fin corner rounding in 3D nanocrystal flash memories

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD

Volumn , Issue , 2008, Pages 61-63

  Nowak, E ^a   Perniola, L ^a   Jahan, C ^a   Scheiblin, P ^a   Reimbold, G ^a   De Salvo, B ^a   Boulanger, F ^a   Ghibaudo, G ^b  

^a CEA LETI   (France)

^b IMEP LAHC   (France)

Author keywords

3D; Corner effect; FinFLASH; Flash memory; SONOS FinFET

Indexed keywords

3-D STRUCTURES; 3D; CORNER EFFECT; CORNER ROUNDING; ELECTRICAL BEHAVIORS; EXPERIMENTAL DATA; FINFLASH; GATE STACKS; GEOMETRICAL VARIATIONS; INTERNATIONAL CONFERENCES; MEMORY TECHNOLOGY; NON-VOLATILE; SEMI-ANALYTICAL MODELING; SEMICONDUCTOR MEMORIES; SONOS FINFET; TRI-GATE;

ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; FINS (HEAT EXCHANGE); FLASH MEMORY; MODEL STRUCTURES; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURES; NANOTECHNOLOGY; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR STORAGE; TECHNOLOGY; THREE DIMENSIONAL;

DATA STORAGE EQUIPMENT;

EID: 50249147863     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVSMW.2008.24     Document Type: Conference Paper

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