Analysis of the subthreshold shift induced by the shallow trench isolation corner in advanced dram and flash memories

Proceedings of the International Semiconductor Conference, CAS

Volumn 2, Issue , 2001, Pages 499-502

  Tazlauanu, Mihai ^a   Scansen, Don ^a   Gibb, Kevin ^a  

^a Semiconductor Insights Inc Canada   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DYNAMIC RANDOM ACCESS STORAGE; FLASH MEMORY; LEAKAGE CURRENTS; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; VLSI CIRCUITS;

GATE OXIDE THINNING; MEMORY CIRCUITS; SHALLOW TRENCH ISOLATION; SUBTHRESHOLD SHIFT;

MOSFET DEVICES;

EID: 0035744315     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)