Tunnel oxide degradation under pulsed stress

Microelectronics Reliability

Volumn 45, Issue 9-11, 2005, Pages 1337-1342

  Ghidini, G ^a   Capolupo, C ^a   Giusto, G ^a   Sebastiani, A ^a   Stragliati, B ^a   Vitali, M ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

FLASH MEMORY; LEAKAGE CURRENTS; OXIDATION; OXIDES; STRESS ANALYSIS;

STABLE TRAPS; STRESS INDUCED LEAKAGE CURRENT (SILC); TUNNEL OXIDE DEGRADATION;

DEGRADATION;

EID: 24144503732     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.07.017     Document Type: Conference Paper

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