Physical model of field enhancement and edge effects of FinFET charge-trapping NAND flash devices

IEEE Transactions on Electron Devices

Volumn 56, Issue 6, 2009, Pages 1235-1242

  Hsu, Tzu Hsuan ^a,b   Lue, Hang Ting ^a   King, Ya Chin ^b   Hsiao, Yi Hsuan ^a   Lai, Sheng Chih ^a   Hsieh, Kuang Yeu ^a   Liu, Rich ^a   Lu, Chih Yuan ^a,c  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c Ardentec Corporation   (Taiwan)

Author keywords

Bandgap engineered SONOS (BE SONOS) NAND; Body tied FinFET; Edge effect; Field enhancement (FE); Geometrical effect

Indexed keywords

BANDGAP-ENGINEERED SONOS (BE-SONOS) NAND; BODY-TIED FINFET; EDGE EFFECT; FIELD ENHANCEMENT (FE); GEOMETRICAL EFFECT;

CHARGE TRAPPING; ENERGY GAP; GATES (TRANSISTOR); ROADS AND STREETS; THREE DIMENSIONAL;

FIELD EFFECT TRANSISTORS;

EID: 67349145277     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2018713     Document Type: Article

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