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Volumn 115, Issue 32, 2011, Pages 16063-16073

Enhanced nucleation and growth of diamond film on Si by CVD using a chemical precursor

Author keywords

[No Author keywords available]

Indexed keywords

ADAMANTANES; CARBON PHASIS; CHEMICAL PRECURSORS; DIAMOND DEPOSITION; DIAMOND GROWTH; INITIAL GROWTH PERIOD; INTERMEDIATE LAYERS; LOW-TEMPERATURE DEPOSITION; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITIONS; NANO DIAMOND; NUCLEATION AND GROWTH; NUCLEATION OF DIAMONDS; NUCLEATION PROCESS; PRE-TREATMENT; PT PARTICLE; ROOM TEMPERATURE; SILICIDATION; SUBSTRATE SURFACE; ULTRASONIC TREATMENTS;

EID: 80051767302     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp2041179     Document Type: Article
Times cited : (29)

References (49)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.