Stability Enhancement of Partially-Oxidized Porous Silicon Nanostructures Modified with Ethyl Undecylenate

Nano Letters

Volumn 1, Issue 12, 2001, Pages 713-717

  Boukherroub, Rabah ^a   Wayner, Danial D M ^a   Sproule, G Irwin ^a   Lockwood, David J ^a   Canham, Leigh T ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011776778     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl010061a     Document Type: Article

References (26)

1. Issued as NRCC publication number 47886.
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20. -1 resolution. The samples were mounted in a purged sample chamber. Background spectra were obtained using a flat untreated Si(100) wafer.
21. 6
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24. The chemographs were taken using 25 μm thick Ilford L4 nuclear tracking emulsion plates. Porous silicon samples were placed in direct contact with the plate in air of 100% relative humidity at room temperature for times ranging from 1 to 16 h in complete darkness. The plates were then presoaked in deionized water, developed using 3:1 diluted Kodak D19 developer for 5 min 30 s, and fixed in 7:1 diluted G333C AGFA for 30 min. All of these operations were conducted at 5 °C. Subsequent washing in water for 1 h was carried out at room temperature. The plates were then printed out onto photographic paper using a Fuji Pictostat 300 running in transmission mode so that the black features shown here correspond to high exposure in the original plate.
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