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Volumn 21, Issue 38, 2010, Pages

A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATORS; CROSS BAR; FORWARD CURRENTS; HIGH DENSITY; INTERFERENCE PROBLEMS; KIRCHHOFF'S LAWS; NANO SCALE; RESISTANCE RATIO; RESISTIVE MEMORIES; RESISTIVE SWITCHING; SCHOTTKY DIODES; THEORETICAL MODELS; VOLTAGE ESTIMATION;

EID: 77958553531     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/38/385202     Document Type: Article
Times cited : (48)

References (8)
  • 3
    • 77958589090 scopus 로고    scopus 로고
    • US Patent Specification 6 256767
    • Kuekes P J andWilliams R S 2001 US Patent Specification 6 256767
    • (2001)
    • Kuekes, P.J.1    Williams, R.S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.