Effect of interface layer on growth behavior of atomic-layer-deposited Ir thin film as novel Cu diffusion barrier

Applied Surface Science

Volumn 257, Issue 22, 2011, Pages 9654-9660

  Choi, Bum Ho ^a   Lee, Jong Ho ^a   Lee, Hong Kee ^a   Kim, Joo Hyung ^b  

^a Korea Institute of Industrial Technology   (South Korea)

^b Chosun University   (South Korea)

Author keywords

ALD; Cu diffusion barrier; Growth; Interface; Ir; Mechanism

Indexed keywords

ATOMIC LAYER DEPOSITION; CHEMICAL BONDS; COPPER; DIFFUSION BARRIERS; FILM GROWTH; GROWTH (MATERIALS); INTERFACES (MATERIALS); IRIDIUM; MECHANISMS; NUCLEATION; SILICA; SUBSTRATES; TANTALUM COMPOUNDS; THIN FILMS;

ATOMIC LAYER DEPOSITED; COPPER DIFFUSION BARRIER; CU DIFFUSION BARRIER; DEPOSITION CONDITIONS; DEPOSITION TEMPERATURES; DIFFERENT SUBSTRATES; METAL ORGANIC PRECURSORS; THREE-DIMENSIONAL ISLANDS;

NITROGEN COMPOUNDS;

EID: 80051544935     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.06.093     Document Type: Article

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