Iridium layer as oxygen barrier and growth substrate for oriented PZT thin films

Journal of Optoelectronics and Advanced Materials

Volumn 9, Issue 5, 2007, Pages 1508-1510

  Trupina, L ^a   Miclea, C ^a   Tanasoiu, C ^a   Amarande, L ^a   Miclea, C T ^a   Cioangher, M ^a  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

Barrier layer; Ferroelectric; Iridium layer; Non volatile memories; PZT films; Thin films

Indexed keywords

DIFFUSION BARRIERS; FERROELECTRIC DEVICES; FERROELECTRIC FILMS; FERROELECTRIC MATERIALS; FERROELECTRIC RAM; IRIDIUM; OXIDE MINERALS; OXYGEN; TEXTURES; TITANIUM DIOXIDE;

ANNEALING TEMPERATURES; BARRIER LAYERS; GROWTH SUBSTRATES; IRIDIUM THIN FILMS; NON-VOLATILE MEMORY; OXYGEN DIFFUSION BARRIERS; PZT FILM; RF SPUTTERING METHOD;

THIN FILMS;

EID: 38549085808     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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