Stability of Cu/Ir/Si trilayer structure to moderate annealing

Materials Science in Semiconductor Processing

Volumn 12, Issue 4-5, 2009, Pages 151-155

  Leu, L C ^a   Norton, D P ^a   Anderson, T J ^a   McElwee White, L ^b  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b University of Florida   (United States)

Author keywords

Cu interconnects; Diffusion barrier; Iridium

Indexed keywords

ANNEALING IN VACUUM; COPPER DIFFUSION; COPPER DIFFUSION BARRIER; COPPER SILICIDE; CU-INTERCONNECTS; IN-SITU DEPOSITION; IRIDIUM THIN FILMS; OUT-DIFFUSION; PROCESSING TEMPERATURE; SI SUBSTRATES; TEMPERATURE RANGE; TRILAYER STRUCTURE; ULTRA-THIN;

ANNEALING; DEPOSITION; DIFFUSION BARRIERS; ELECTRIC POWER SYSTEM INTERCONNECTION; IRIDIUM; PROCESSING; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; ULTRATHIN FILMS;

COPPER;

EID: 77249121049     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2009.09.008     Document Type: Article

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