Iridium thin films deposited by liquid delivery MOCVD using Ir(EtCp)(1,5-COD) with toluene solvent

Chemical Vapor Deposition

Volumn 13, Issue 12, 2007, Pages 698-704

  Ritterhaus, Yves ^a   Hur'yeva, Tetyana ^a   Lisker, Marco ^a   Burte, Edmund P ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

Ir(EtCp)(1,5 COD); Iridium thin films; Liquid delivery; MOCVD; Toluene solvent

Indexed keywords

ANNEALING; CHEMICAL OXYGEN DEMAND; ELECTRIC PROPERTIES; FULLERENES; MECHANICAL PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC SOLVENTS; OXYGEN; REACTION KINETICS; SOLIDS; SOLVENTS; THICK FILMS; THIN FILMS; TOLUENE; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE ORIENTATIONS; CYCLOOCTADIENE; ELECTRICAL PROPERTIES; FILM COMPOSITIONS; FILM MORPHOLOGIES; IR(ETCP)(1,5-COD); LIQUID DELIVERIES; LIQUID DELIVERY; LOW RESISTIVITIES; MOCVD; ORGANIC; OXIDIZING ATMOSPHERES; STORAGE CAPACITORS; X-RAY DIFFRACTIONS;

IRIDIUM;

EID: 54949103567     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200706630     Document Type: Article

References (25)

1. O. Auciello, J. F. Scott, R. Ramesh, Phys. Today 1998, 51, 22.
2. C. S. Hwang, Mater. Sci Eng. 1998, B56, 178.
3. A. Grill, Mater. Res. Soc. Symp. Proc. 1999, 541, 89.
4. Y.-C. Jeon, J.-M. Seon, J.-H. Joo, K.-Y. Oh, J.-S. Roh, J-J. Kim, D.-S. Kim, Appl. Phys. Lett. 1997, 71, 467.
5. N. Izumi, Y. Fujimori, T. Nakamura, A. Kamisawa, IEICE Trans. Electron. 1998, E81-C, 513.
6. A. Grill, M. J. Brady, Integ. Ferroelect. 1995, 9, 299.
7. J. S. Lee, H. J. Kwon, Y. W. Jeong, H. H. Kim, K. H. Park, C. Y. Kim, Mat. Res. Soc. Symp. Proc., Ferroelectric Thin Films V 1996, 175.
8. D.-S. Yoon, J. S. Roh, Semicond. Sci. Technol. 2002, 17, 1048.
9. J.-H. Joo, J.-M. Seon, Y.-C. Jeon, K.-Y. Oh, J.-S. Roh, J.-J. Kim, J.-T. Choi, Jpn. J. Appl. Phys. 1998, 37, 3396.
10. D.-S. Yoon, K. Hong, J. S. Roh, J. Vac. Sci. Technol. A. 2001, 19, 1730.
11. J. B. Hoke, E. W. Stern, H. H. Murray, J. Mater. Chem. 1991, 1, 551.
12. R. Vargas, T. Goto, W. Zwang, T. Hirai, Appl Phys. Lett. 1994, 65, 1094.
13. C. Xu, F. Dimeo Jr., T. H. Baum, M. Russel, Mater. Res. Soc. Symp. Proc. 1999, 541, 129.
14. Y.-M. Sun, J. P. Endle, K. Smith, J. G. Ekerdt, R. L. Hance, P. Alluri, J. M. White, Mater. Res. Soc. Symp. Proc. 1999, 541, 101.
15. Y.-M. Sun, J. P. Endle, K. Smith, S. Whaley, R. Mahaffy, J. G. Ekerdt, J. M. White, R. L. Hance, Thin Solid Films 1999, 346, 100.
16. S. K. Dey, J. Goswami, C.-G. Wang, P. Majhi, Jpn. J. Appl. Phys. 1999, 38, L1052.
17. P. C. van Buskirk, S. M. Bilodeau, J. F. Roeder, P. S. Kirlin, Jpn. J. Appl. Phys. 1996, 35, 2520.
18. S. K. Dey, P. V. Alluri, Mater. Res. Soc. Bull. 1996, 21, 44.
19. T. Nahatame, M. Hiratani, M. Kadoshima, Y. Shimamoto, Y. Matsui, Y. Ohji, I. Asano, T. Fujiwara, T. Suzuki, Jpn. J. Appl. Phys. 2000, 39, L1188.
20. M. Shimizu, K. Kita, H. Fujisawa, H. Niu, Mater. Res. Soc. Symp. Proc. 2001, 655, CC1.10.1.
21. K. Kawano, M. Takamori, K. Tada, T. Yamakawa, N. Ohshima, S. Watari, H. Fujisawa, M. Shimizu, TOSOH Res. & Tech. Rev. 2004, 48, 3.
22. Y. Nishi, R. Doering, Handbook of Semiconductor Manufacturing Technology, Marcel Dekker, Inc., New York 2001.
23. The Chemistry of Metal CVD (Eds: T. T. Kodas, M. J HampdenSmith), VCH, Weinheim 1994.
24. I. K. Igumenov, N. V. Gelfond, N. B. Morozova, P. P. Semyannikov, S. V. Trubin, V. S. Danilovich, L. Gimeno-Fabra, Electrochem. Soc. Proc. 2003, 8, 1327.
25. M. A. El Khakani, M. Chaker, Mater. Res. Soc. Symp. Proc. 1997, 472, I9.12.