Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition

Microelectronic Engineering

Volumn 87, Issue 5-8, 2010, Pages 1391-1395

  Choi, Bum Ho ^a   Lim, Yong Hwan ^a   Lee, Jong Ho ^a   Kim, Young Baek ^a   Lee, Ho Nyun ^a   Lee, Hong Kee ^a  

^a Korea Institute of Industrial Technology   (South Korea)

Author keywords

Cu interconnection; Diffusion barrier; Glue layer; PEALD; Ruthenium

Indexed keywords

ATOMIC LAYER DEPOSITED; BI-LAYER; CONFORMAL DEPOSITION; COPPER DIFFUSION BARRIER; DENSE AMORPHOUS PHASE; DEPOSITION CONDITIONS; GLUE LAYER; GLUE LAYERS; GROWTH BEHAVIOR; LINEAR RELATION; NON-PATTERNED WAFERS; NUMBER OF CYCLES; OPTIMAL CONDITIONS; PATTERNED TRENCH; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; PROCESS PARAMETERS; RU FILM; RU THIN FILMS; SELF-LIMITED; STEP COVERAGE; TEM; WAFER SCALE; WORKING PRESSURES;

AMORPHOUS FILMS; ASPECT RATIO; DEPOSITION; DIFFUSION BARRIERS; FILM GROWTH; FILM PREPARATION; FILM THICKNESS; GLUES; GLUING; PLASMA DEPOSITION; PRESSURE DROP; RUTHENIUM; SILICON; SILICON WAFERS; TANNING; TANTALUM COMPOUNDS; THIN FILM DEVICES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 76949095641     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.163     Document Type: Article

References (26)

1. International Technology Roadmap for Semiconductors, 2008. Available from: .
2. Kwon O.K., Kim J.H., Park H.S., and Kang S.W. J. Electrochem. Soc. 151 (2004) G109
3. Arunagiri T.N., Zhang Y., Chyan O., El-Bouanani M., Kim M.J., Chen K.H., Wu C.T., and Chen L.C. Appl. Phys. Lett. 86 (2005) 083104
4. Xie Q., Jiang Y.L., Musschoot J., Deduytsche D., Detavernier C., Van Meirhaeghe R.L., Van den Berghe S., Ru G.P., Li B.Z., and Qu X.P. Thin Solid Films 517 16 (2009) 4689
5. Wang Q., Ekerdt J.G., Gay D., Sun Y.-M., and White J.M. Appl. Phys. Lett. 84 (2004)
6. Kwon O.K., Kwon S.H., Park H.S., and Kang S.W. J. Eletrochem. Soc. 151 (2004) C753
7. Kim S.H., Kim H.T., Yim S.S., Lee D.J., Kim K.S., Kim H.M., Kim K.B., and Sohn H. J. Electrochem. Soc. 155 (2008) H589
8. Park S.J., Kim W.H., Maeng W.J., Yang Y.S., Park C.G., Kim H., Lee K.N., Jung S.W., and Seong W.K. Thin Solid Films 516 21 (2008) 7345
9. Kwon O.K., Kwon S.H., Park H.S., and Kang S.W. Electrochem. Solid-State Lett. 7 (2004) C46
10. Kim H. J. Vac. Sci. Technol. B 21 (2003) 2231
11. Y.M. Kim, B.H. Choi, S.S. Shin, Y.B. Kim, J.H. Lee, J.W. Park, T.W. Kim, K.Y. Kim, H.K. Lee, S.H. Son, International Microprocesses and Nanotechnology Conference, Digest of Papers 29D-9-57, 2008.
12. Aaltonen T., Alén P., Ritala M., and Leskelä M. Chem. Vapor. Depos. 9 (2003) 45
13. B.H. Choi, J.W. Lee, private communication.
14. Zhao X., Magtoto N.P., and Kelber J.A. Thin Solid Films 188 (2004) 478
15. Wu Y.Y., Kohnm A., and Eizenberg M. J. Appl. Phys. 95 (2004) 6174
16. Tan J.J., Qu X.P., Xie Q., Zhou Y., and Ru G.P. Thin Solid Films 504 (2006) 231
17. Rawal S., Norton D.P., Kim K.C., Anderson T.J., and McElwee-White L. Appl. Phys. Lett. 89 (2006) 231914
18. Kwon O.K., Kwon S.H., Park H.S., and Kang S.W. J. Electrochem. Soc. 151 (2004) C753
19. Wang Z., Yaegashi O., Sakaue H., Takahagi T., and Shingubara S. Appl. Phys. Lett. 94 (2003)
20. Tsai M.H., Sun S.C., Chiu H.T., Tsai C.E., and Chuang S.H. Appl. Phys. Lett. 67 (1995)
21. Kang Y., Lee C., and Lee J. Mater. Sci. Eng. B 75 (2000) 17
22. Gordon R.G., Hausmann D., Kim E., and Shepard J. Chem. Vapor. Depos. 9 2 (2003) 73
23. Kang S.Y., Hwang C.S., and Kim H.J. J. Electrochem. Soc. 152 (2005) C15
24. Kim J.Y., Lee K.W., Park H.O., Kim Y.D., and Jeon H. J. Korean Phys. Soc. 45 (2004) 1069
25. M. Abe, M. Ueki, M. Tada, T. Onodera, N. Furutake, K. Shimura, S. Saito, Y. Hayashi, in: IEEE International Interconnect Technology Conference, IEEE, 2007, pp. 4-6.
26. Kim H., Detavenier C., van der Straten O., Rossnagel S.M., Kellock A.J., and Park D.-G. J. Appl. Phys. 98 (2005)