Low resistivity aluminum nitride: carbon (AlN:C) films grown by metal organic chemical vapor deposition

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 279-282

  Wongchotiqul, K ^a   Chen, N ^a   Zhang, D P ^a   Tang, X ^a   Spencer, M G ^a  

^a HOWARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CARBON; ELECTRIC CONDUCTIVITY; FILM GROWTH; HETEROJUNCTIONS; HIGH PRESSURE EFFECTS; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PROPANE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SINGLE CRYSTALS;

ALUMINUM NITRIDE; PRECURSORS; TRIMETHYLALUMINUM; VAN DER PAW MEASUREMENTS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0029766285     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)