Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: Synthesis, characterization and properties

Nanotechnology

Volumn 20, Issue 45, 2009, Pages

  Cao, Y L ^a   Tang, Y B ^a   Liu, Y ^a   Liu, Z T ^a   Luo, L B ^a   He, Z B ^a   Jie, J S ^a   Vellaisamy, Roy ^a   Zhang, W J ^a   Lee, C S ^a   Lee, S T ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION METHODS; COAXIAL NANOCABLES; ELECTRICAL PROPERTY; FORMATION MECHANISM; INSULATING LAYERS; NANOCABLES; NANOSCALE DEVICE; P-TYPE; POTENTIAL APPLICATIONS; SILICON SUBSTRATES; SINGLE-CRYSTALLINE; ZINC TELLURIDES; ZINC-BLENDE; ZNTE NANOWIRE;

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTRIC WIRE; GOLD DEPOSITS; NANOWIRES; SEMICONDUCTING ZINC COMPOUNDS; SILICON COMPOUNDS; SYNTHESIS (CHEMICAL); ZINC;

SILICON OXIDES;

GOLD; NANOSHELL; NANOWIRE; SILICON; SILICON OXIDE; UNCLASSIFIED DRUG; ZINC; ZINC SULFIDE; ZINC TELLURIDE;

ARTICLE; CONTROLLED STUDY; CRYSTAL STRUCTURE; ELECTRIC ACTIVITY; NANOSENSOR; NANOTECHNOLOGY; PRIORITY JOURNAL; SYNTHESIS; VAPOR;

EID: 70350680813     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/45/455702     Document Type: Article

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