Band alignment at interfaces of oxide insulators with semiconductors

Integrated Ferroelectrics

Volumn 125, Issue 1, 2011, Pages 53-60

  Afanas'ev, V V ^a   Houssa, M ^a   Stesmans, A ^a  

^a KU LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; ENERGY POSITION; GAAS; INP; OXIDE VALENCE BAND; REFERENCE LEVELS; WIDE SPECTRUM; WIDE-GAP OXIDES;

ALIGNMENT; DISSIMILAR MATERIALS; GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS;

INTERFACES (MATERIALS);

EID: 79961179415     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584587.2011.574041     Document Type: Conference Paper

References (21)

1. J. Robertson, Band offsets of wide-band-gap oxides and implications for future electronic devices. J Vac Sci Technol B. 18, 1785-1791 (2000).
2. D. J. Schlom and J. H. Haeni, A thermodynamic approach to selecting alternative gate dielectrics. MRS Bull. 27, 198-204 (2002). (Pubitemid 34277043)
3. J. Robertson, High dielectric constant gate oxides for metal oxide Si transistors. Rep Prog Phys. 69, 327-396 (2006). (Pubitemid 43121643)
4. 2. MRS Bull. 33, 1017-1025 (2008).
5. W. M. Lau, Effects of a depth-dependent specimen potential on X-ray photoelectron spectroscopic data. J Appl Phys. 65, 2047-2052 (1989).
6. 2/Si stack using charge corrected X-ray photoelectron spectroscopy. J Appl Phys. 107, 043702 (1-13) (2010).
7. V. V. Afanas'ev and A. Stesmans, Internal photoemission at interfaces of high-k insulators with semiconductors and metals. J Appl Phys. 102, 081301 (1-28) (2007).
8. V. V. Afanas'ev, Internal Photoemission Spectroscopy: Principles and Applications. Oxford: Elsevier; 2008.
9. See, e. g., M. Houssa, ed. High-k Gate Insulators. Bristol: IoP Publishing; 2004.
10. 2. J Appl Phys. 91, 3079-3085 (2002).
11. 3. Appl Phys Lett. 81, 1678-80 (2002).
12. B. Ealet, M. H. Elyakhloufi, E. Gillet, and M. Ricci, Electronic and crystallographic structure of gamma-alumina thin-films. Thin Solid Films 250, 92-100 (1994).
13. H. Momida, T. Hamada, Y. Takagi, T. Yamamoto, T. Uda, and T. Ohno, Theoretical study on dielectric response of amorphous alumina. Phys Rev B. 73, 054108 (1-7) (2006).
14. V. V. Afanas'ev, A. Stesmans, K. Cherkaoui, and P. K. Hurley, Electron energy band alignment at the (100) Si/MgO interface. Appl Phys Lett. 96, 052103 (1-3) (2010).
15. 3. Microelectron Eng. 84, 2278-2281 (2007). (Pubitemid 46777016)
16. G. Lucovsky, Correlations between electronic structure of transition metal atoms and performance of high-k gate dielectrics in advanced Si devices. J. Non-Cryst Solids 303, 40-49 (2002). (Pubitemid 34410824)
17. 3 and Si (100). J Appl Phys. 96, 1635-1639 (2004).
18. 2. Appl. Phys. Lett. 92, 022109 (1-3) (2008).
19. 2. Appl Phys Lett. 93, 212104 (1-3) (2008).
20. 2. Appl. Phys. Lett. 94, 202110 (1-3) (2009).
21. x (0.28 < x < 0.93) layers. Appl Phys Lett. 94, 172106 (1-3) (2009).