Wet etching of GaAs(100) in acidic and basic solutions: A synchrotron-photoemission spectroscopy study

Journal of Physical Chemistry C

Volumn 112, Issue 47, 2008, Pages 18510-18515

  Lebedev, Mikhail V ^a   Mankel, Eric ^b   Mayer, Thomas ^b   Jaegermann, Wolfram ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACIDS; ARSENIC; EMISSION SPECTROSCOPY; ETCHING; GALLIUM; GALLIUM ALLOYS; LUMINESCENCE OF ORGANIC SOLIDS; MOLECULES; PHOTOELECTRICITY; PHOTOEMISSION; PROPANOL; SEMICONDUCTING GALLIUM; SYNCHROTRONS; WET ETCHING;

2 PROPANOLS; ADSORBED WATERS; AQUEOUS AMMONIA SOLUTIONS; BASIC SOLUTIONS; GAAS(100); GALLIUM ATOMS; GALLIUM CHLORIDES; PHOTOEMISSION SPECTROSCOPIES;

HYDROCHLORIC ACID;

EID: 57549100403     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp805568t     Document Type: Article

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