SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 158, Issue 9, 2011, Pages

Inverted octagonal surface defects in a-Plane AlGaN/GaN multiple quantum wells

(4) Huang, Huei Min a Chang, Chiao Yun a Lu, Tien Chang a Yang, Chi Chin a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; AL INCORPORATION; ALGAN/GAN; CRYSTALLINE FACETS; NON-POLAR; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; SURFACE PITS;

CATHODOLUMINESCENCE; GALLIUM NITRIDE; STACKING FAULTS; SURFACE DEFECTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79960928979 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3610990 Document Type: Article

Times cited : (5)

References (25)

1
- 79956015209
- Threading dislocation reduction via laterally overgrown nonpolar (1120) a-plane GaN
- DOI 10.1063/1.1498010
- M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 81, 1201 (2002). 10.1063/1.1498010 (Pubitemid 34963803)
- (2002) Applied Physics Letters , vol.81 , Issue.7 , pp. 1201
- Craven, M.D.¹ Lim, S.H.² Wu, F.³ Speck, J.S.⁴ DenBaars, S.P.⁵

2
- 0034228151
- 10.1002/1521-396X(200007)180:1<>1.0.CO;2-R
- P. Waltereit, O. Brandt, M. Ramsteiner, A. Trampert, H. T. Grahn, J. Menniger, M. Reiche, R. Uecker, P. Reiche, and K. H. Ploog, Phys. status solidi A, 180, 133 (2000). 10.1002/1521-396X(200007)180:1<>1.0.CO;2-R
- (2000) Phys. Status Solidi A , vol.180 , pp. 133
- Waltereit, P.¹ Brandt, O.² Ramsteiner, M.³ Trampert, A.⁴ Grahn, H.T.⁵ Menniger, J.⁶ Reiche, M.⁷ Uecker, R.⁸ Reiche, P.⁹ Ploog, K.H.¹⁰

3
- 0034710677
- Nirtride semiconductors free of electrostatic fields for efficient white light-emitting diodes
- DOI 10.1038/35022529
- P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche and K. H. Ploog, Nature (London), 406, 865 (2000). 10.1038/35022529 (Pubitemid 30664256)
- (2000) Nature , vol.406 , Issue.6798 , pp. 865-868
- Waltereit, P.¹ Brandt, O.² Trampert, A.³ Grahn, H.T.⁴ Monniger, J.⁵ Ramsteiner, M.⁶ Relche, M.⁷ Ploog, K.H.⁸

4
- 1642337145
- 10.1063/1.1650545
- M. D. Craven, F. Wu, A. Chakraborty, B. Imer, U. K. Mishra, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett., 84, 1281 (2004). 10.1063/1.1650545
- (2004) Appl. Phys. Lett. , vol.84 , pp. 1281
- Craven, M.D.¹ Wu, F.² Chakraborty, A.³ Imer, B.⁴ Mishra, U.K.⁵ Denbaars, S.P.⁶ Speck, J.S.⁷

5
- 33847758668
- Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition
- DOI 10.1016/j.jcrysgro.2006.12.046, PII S0022024807000498
- T. S. Ko, T. C. Wang, R. C. Gao, H. G. Chen, G. S. Huang, T. C. Lu, H. C. Kuo, and S. C. Wang, J. Cryst. Growth, 300, 308 (2007). 10.1016/j.jcrysgro. 2006.12.046 (Pubitemid 46386050)
- (2007) Journal of Crystal Growth , vol.300 , Issue.2 , pp. 308-313
- Ko, T.S.¹ Wang, T.C.² Gao, R.C.³ Chen, H.G.⁴ Huang, G.S.⁵ Lu, T.C.⁶ Kuo, H.C.⁷ Wang, S.C.⁸

6
- 40849118521
- Improvements in a -plane GaN crystal quality by a two-step growth process
- DOI 10.1063/1.2830023
- J. L. Hollander, M. J. Kappers, C. McAleese, and C. J. Humphreys, Appl. Phys. Lett., 92, 101104 (2008). 10.1063/1.2830023 (Pubitemid 351393869)
- (2008) Applied Physics Letters , vol.92 , Issue.10 , pp. 101104
- Hollander, J.L.¹ Kappers, M.J.² McAleese, C.³ Humphreys, C.J.⁴

7
- 0043014817
- 10.1063/1.1593817
- B. A. Haskell, F. Wu, M. D. Craven, s. Matsuda, P. T. Fini, T. Fujii, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, Appl. Phys. Lett., 83, 644 (2003). 10.1063/1.1593817
- (2003) Appl. Phys. Lett. , vol.83 , pp. 644
- Haskell, B.A.¹ Wu, F.² Craven, M.D.³ Matsuda, S.⁴ Fini, P.T.⁵ Fujii, T.⁶ Fujito, K.⁷ Denbaars, S.P.⁸ Speck, J.S.⁹ Nakamura, S.¹⁰

8
- 28344437854
- Structural TEM study of nonpolar a-plane gallium nitride grown on (1120)4H-SiC by organometallic vapor phase epitaxy
- DOI 10.1103/PhysRevB.71.235334, 235334
- D. N. Zakharov, Z. Liliental-Weber, B. Wagner, Z. J. Reitmeier, E. A. Preble and R. F. Davis, Phys. Rev. B, 71, 235334 (2005). 10.1103/PhysRevB.71. 235334 (Pubitemid 41717882)
- (2005) Physical Review B - Condensed Matter and Materials Physics , vol.71 , Issue.23 , pp. 1-9
- Zakharov, D.N.¹ Liliental-Weber, Z.² Wagner, B.³ Reitmeier, Z.J.⁴ Preble, E.A.⁵ Davis, R.F.⁶

9
- 33646709941
- Prismatic stacking faults in epitaxially laterally overgrown GaN
- DOI 10.1063/1.2193352
- J. Mei, S. Srinivasan, R. Liu, F. A. Ponce, Y. Narukawa, and T. Mukai, Appl. Phys. Lett., 88, 141912 (2006). 10.1063/1.2193352 (Pubitemid 43731460)
- (2006) Applied Physics Letters , vol.88 , Issue.14 , pp. 141912
- Mei, J.¹ Srinivasan, S.² Liu, R.³ Ponce, F.A.⁴ Narukawa, Y.⁵ Mukai, T.⁶

10
- 33748458139
- High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire
- DOI 10.1063/1.2236901
- T. Paskova, R. Kroeger, S. Figge, D. Hommel, V. Darakchieva, B. Monemar, E. Preble, A. Hanser, N. M. Williams, and M. Tutor, Appl. Phys. Lett., 89, 051914 (2006). 10.1063/1.2236901 (Pubitemid 44350231)
- (2006) Applied Physics Letters , vol.89 , Issue.5 , pp. 051914
- Paskova, T.¹ Kroeger, R.² Figge, S.³ Hommel, D.⁴ Darakchieva, V.⁵ Monemar, B.⁶ Preble, E.⁷ Hanser, A.⁸ Williams, N.M.⁹ Tutor, M.¹⁰

11
- 34547838336
- Microstructural characterization of semipolar GaN templates and epitaxial-lateral-overgrown films deposited on m-plane sapphire by metalorganic vapor phase epitaxy
- DOI 10.1143/JJAP.46.4089
- P. Vennégus, Z. Bougrioua, and T. Guehne, J. Appl. Phys., 46, 4089 (2007). 10.1143/JJAP.46.4089 (Pubitemid 47245362)
- (2007) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.46 , Issue.7 , pp. 4089-4095
- Vennegues, P.¹ Bougrioua, Z.² Guehne, T.³

12
- 56349125752
- 10.1063/1.3009969
- Q. Sun, C. D. Yerino, T. S. Ko, Y. S. Cho, I. H. Lee, J. Han, and M. E. Coltrin, J. Appl. Phys., 104, 093523 (2008). 10.1063/1.3009969
- (2008) J. Appl. Phys. , vol.104 , pp. 093523
- Sun, Q.¹ Yerino, C.D.² Ko, T.S.³ Cho, Y.S.⁴ Lee, I.H.⁵ Han, J.⁶ Coltrin, M.E.⁷

13
- 1242329860
- 10.1063/1.1638884
- M. D. Craven, P. Waltereit, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett., 84, 496 (2004). 10.1063/1.1638884
- (2004) Appl. Phys. Lett. , vol.84 , pp. 496
- Craven, M.D.¹ Waltereit, P.² Speck, J.S.³ Denbaars, S.P.⁴

14
- 51749108176
- 10.1063/1.2971205
- T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, Appl. Phys. Lett., 93, 101901 (2008). 10.1063/1.2971205
- (2008) Appl. Phys. Lett. , vol.93 , pp. 101901
- Badcock, T.J.¹ Dawson, P.² Kappers, M.J.³ McAleese, C.⁴ Hollander, J.L.⁵ Johnston, C.F.⁶ Sridhara Rao, D.V.⁷ Sanchez, A.M.⁸ Humphreys, C.J.⁹

15
- 53349175303
- 10.1063/1.2993333
- Q. Sun, Y. S. Cho, I. H. Lee, J. Han, B. H. Kong, and H. K. Cho, Appl. Phys. Lett., 93, 131912 (2008). 10.1063/1.2993333
- (2008) Appl. Phys. Lett. , vol.93 , pp. 131912
- Sun, Q.¹ Cho, Y.S.² Lee, I.H.³ Han, J.⁴ Kong, B.H.⁵ Cho, H.K.⁶

16
- 73849095031
- 10.1063/1.3272790
- Q. Sun, B. H. Kong, C. D. Yerino, T. S. Ko, B. Leung, H. K. Cho, and J. Han, J. Appl. Phys., 106, 123519 (2009). 10.1063/1.3272790
- (2009) J. Appl. Phys. , vol.106 , pp. 123519
- Sun, Q.¹ Kong, B.H.² Yerino, C.D.³ Ko, T.S.⁴ Leung, B.⁵ Cho, H.K.⁶ Han, J.⁷

17
- 77951665084
- 10.1117/12.847425
- Q. Sun and J. Han, Proc. SPIE, 7617, 761717 (2010). 10.1117/12.847425
- (2010) Proc. SPIE , vol.7617 , pp. 761717
- Sun, Q.¹ Han, J.²

18
- 0042855995
- 10.1063/1.1578530
- F. Wu, M. D. Craven, S. H. Lim and J. S. Speck, J. Appl. Phys., 94, 942 (2003). 10.1063/1.1578530
- (2003) J. Appl. Phys. , vol.94 , pp. 942
- Wu, F.¹ Craven, M.D.² Lim, S.H.³ Speck, J.S.⁴

19
- 19744382873
- Luminescence from stacking faults in gallium nitride
- DOI 10.1063/1.1852085, 021908
- R. Liu, A. Bell, F. A. Ponce, C. Q. Chen, J. W. Yang, and M. A. Khan, Appl. Phys. Lett., 86, 021908 (2005). 10.1063/1.1852085 (Pubitemid 40211639)
- (2005) Applied Physics Letters , vol.86 , Issue.2 , pp. 0219081-0219083
- Liu, R.¹ Bell, A.² Ponce, F.A.³ Chen, C.Q.⁴ Yang, J.W.⁵ Khan, M.A.⁶

20
- 77956570049
- 10.1063/1.3487935
- K. J. Fujan, M. Feneberg, B. Neuschl, T. Meisch, I. Tischer, K. Thonke, S. Schwaiger, I. Izadi, F. Scholz, L. Lechner, Appl. Phys. Lett., 97, 101904 (2010). 10.1063/1.3487935
- (2010) Appl. Phys. Lett. , vol.97 , pp. 101904
- Fujan, K.J.¹ Feneberg, M.² Neuschl, B.³ Meisch, T.⁴ Tischer, I.⁵ Thonke, K.⁶ Schwaiger, S.⁷ Izadi, I.⁸ Scholz, F.⁹ Lechner, L.¹⁰

21
- 0032614090
- 10.1063/1.371241
- N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laugt, and J. Massies, J. Appl. Phys., 86, 3714 (1999). 10.1063/1.371241
- (1999) J. Appl. Phys. , vol.86 , pp. 3714
- Grandjean, N.¹ Damilano, B.² Dalmasso, S.³ Leroux, M.⁴ Laugt, M.⁵ Massies, J.⁶

22
- 33846820440
- Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: Influence of Al composition and Si doping
- DOI 10.1088/0957-4484/18/2/025401, PII S0957448407315444
- M. Esmaeili, H. Haratizadeh, B. Monemar, P. P. Paskov, P. O. Holtz, P. Bergman, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, Nanotechnology, 18, 025401 (2007). 10.1088/0957-4484/18/2/025401 (Pubitemid 46212144)
- (2007) Nanotechnology , vol.18 , Issue.2 , pp. 025401
- Esmaeili, M.¹ Haratizadeh, H.² Monemar, B.³ Paskov, P.P.⁴ Holtz, P.O.⁵ Bergman, P.⁶ Iwaya, M.⁷ Kamiyama, S.⁸ Amano, H.⁹ Akasaki, I.¹⁰

23
- 27144482123
- Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency
- DOI 10.1103/PhysRevLett.95.127402, 127402
- A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, Phys. Rev. Lett., 95, 127402 (2005). 10.1103/PhysRevLett.95.127402 (Pubitemid 41505655)
- (2005) Physical Review Letters , vol.95 , Issue.12 , pp. 1-4
- Hangleiter, A.¹ Hitzel, F.² Netzel, C.³ Fuhrmann, D.⁴ Rossow, U.⁵ Ade, G.⁶ Hinze, P.⁷

24
- 27844537905
- Emission properties of a -plane GaN grown by metal-organic chemical-vapor deposition
- DOI 10.1063/1.2128496, 093519
- P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, J. Appl. Phys., 98, 093519 (2005). 10.1063/1.2128496 (Pubitemid 41655986)
- (2005) Journal of Applied Physics , vol.98 , Issue.9 , pp. 1-5
- Paskov, P.P.¹ Schifano, R.² Monemar, B.³ Paskova, T.⁴ Figge, S.⁵ Hommel, D.⁶

25
- 33746388385
- 10.1002/pssc.v3:6
- P. P. Paskov, R. Schifano, T. Malinauskas, T. Paskova, J. P. Bergman, B. Monemar, S. Figge, D. Hommel, B. A. Haskell, P. T. Fini, Phys. Status Solidi C, 3, 1499 (2006). 10.1002/pssc.v3:6
- (2006) Phys. Status Solidi C , vol.3 , pp. 1499
- Paskov, P.P.¹ Schifano, R.² Malinauskas, T.³ Paskova, T.⁴ Bergman, J.P.⁵ Monemar, B.⁶ Figge, S.⁷ Hommel, D.⁸ Haskell, B.A.⁹ Fini, P.T.¹⁰

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.