Modulation of drain current by redox-active molecules incorporated in Si MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 707-708

  Gowda, Srivardhan ^a   Mathur, Guru ^a   Li, Qiliang ^a   Surthi, Shyam ^a   Zhao, Qian ^a   Lindsey, Jonathan S ^b   Bocian, David F ^c   Misra, Veena ^a  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CMOS INTEGRATED CIRCUITS; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; HYSTERESIS; MOLECULAR DYNAMICS; REDOX REACTIONS; SELF ASSEMBLY; SILICON; MOSFET DEVICES;

CHARGE DENSITY; GATE TECHNOLOGY; REDUCTION POTENTIAL; SILICON DEVICES;

MOSFET DEVICES; DRAIN CURRENT;

CURRENT CHARACTERISTIC; DEVICE CHARACTERISTICS; MOLECULAR MONOLAYER; MOLECULAR STATE; MOSFETS; REDOX ACTIVE MOLECULES; REDOX-ACTIVE; SI MOSFET;

EID: 21644447068     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. S. Gowda, G. Mathur, Q. Li, D. F. Bocian, J. S. Lindsey, V. Misra et al., "Hybrid silicon/molecular memories: co-engineering for novel functionality," IEDM'03 Tech. Dig., pp. 537-540, 2003.
2. K. M. Roth, A. A. Yasseri, Z. M. Liu, J. S. Lindsey, W. G. Kuhr, D. F. Bocian et. al., "Measurements of electron-transfer rates of charge-storage molecular monolayers on Si(100). Toward hybrid molecular/semiconductor information storage devices," J. Amer. Chem. Soc., vol. 125, pp. 505-517, 2003.
3. C. P. Collier, E. W. Wong, M. Belohradsky, J. F. Stoddart, R. S. Williams, and J. R. Heath, "Electronically configurable molecular-based logic gates," Science, vol. 285, pp. 391-394, 1999.
4. D. Gryko, J. Z. Li, J. R. Diers, D. F. Bocian, W. G. Kuhr, and J. S. Lindsey, "Studies related to the design and synthesis of a molecular octal counter," J. Org. Chem., vol. 69, pp. 1435-1443, 2004.
5. Z. M. Liu, A. A. Yasseri, J. S. Lindsey, and D. F. Bocian, "Molecular memories that survive silicon device processing and real-world operation," Science, vol. 302, pp. 1543-1545, 2003.
6. 2 for memory applications," Appl. Phys. Lett., vol. 83, pp. 198-200, 2003.
7. G. Mathur, S. Gowda, Q. Li, S. Surthi, J. S. Lindsey and V. Misra, "Hybrid CMOS/molecular memories using redox-active self-assembled monolayers," Proc. IEEE-Nano, pp. 307-310, 2003.
8. G. Mathur, S. Gowda, Q. Li, S. Surthi, J. S. Lindsey and V. Misra, "Properties of functionalized redox-active monolayers on thin silicon oxide: a study of the dependence of the retention time on the oxide thickness," IEEE Trans. Nanotech, in press.