Study on C60 doped PMMA for organic memory devices

Materials Research Society Symposium Proceedings

Volumn 1250, Issue , 2010, Pages 153-158

  Charbonneau, Micaël ^a   Tiron, Raluca ^a   Buckley, Julien ^a   Py, Mathieu ^a   Barnes, Jean Paul ^a   Derrough, Samir ^a   Constancias, Christophe ^a   Licitra, Christophe ^a   Sourd, Claire ^a   Ghibaudo, Gérard ^b   De Salvo, Barbara ^a  

^a CEA GRENOBLE   (France)

^b IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FULLERENES; MIM DEVICES; MIS DEVICES; MOLECULES; NANOCOMPOSITE FILMS; SECONDARY ION MASS SPECTROMETRY; THERMOANALYSIS;

ACTIVE LAYER; C60 MOLECULES; EXPOSURE TESTS; FULLERENES (C60); NANOCOMPOSITE THIN FILMS; NON-VOLATILE; ORGANIC MEMORY DEVICES; TOF SIMS;

POLYMETHYL METHACRYLATES;

EID: 78650401425     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1250-g04-07     Document Type: Conference Paper

References (13)

1. Y. Yang et Fred Wudl, Advanced Materials vol. 21(2009) 1401-1403.
2. J. Godlewski et M. Obarowska, Europ. Physical Journal. Special Topics 144 (2007) 51-66.
3. TW. Kim, H. Choi, SH. Oh, G. Wang, DY. Kim, H. Hwang and T. Lee, Adv. Mater, vol 21 (2009) 2497.
4. Dong Ick Son, Chan Ho You, Won Tae Kim, Jae Hun Jung, and Tae Whan Kim, Appl. Phys. Lett. 94 (2009) 132103.
5. Q-D. Ling, D-J Liaw, C. Zhuc, D. S-H Chan, E-T Kang, and K-G Neoh, Progress in Polymer Science vol. 33 (2008) 917-978.
6. S. Paul, IEEE Transactions on Nanotechnology vol. 6 (2007) 191-195.
7. H. J. Kim, J. H. Jung, J. H. Harn, and T-W Kim., Japanesee Journal of Applied Physics vol. 47 (2008) 5083-5085.
8. D-I Lee, J-H Harn, J H Jung and T-Whan Kim, Journal of the Korean Physical Society, Vol. 55, (2009), 42-45.
9. M.F. Mabrook, A.S. Jombert, S.E Machin, C Pearson. D. Kolb, Materials Science and Eng B. 159-160 (2009) 14-17.
10. M. Py, JP. Barnes, M. Charbonneau, R. Tiron, and J. Buckley Surface and Interface Analysis (2010). U.R. Tiron et al., submitted to Microelectronic Engineering.
11. Nicollian Edward H., Brews John R., « MOS (Metal Oxide Semiconductor) Physics and Technology », New-York: J. Wiley Interscience Publication (1982).
12. J.A. Hagen, W. Li, A. J. Steckl, and J. G. Grote Appl. Phys. Lett. 88, 171109 (2006).
13. QD Ling, SL Lim, Y. Song, CX. Zhu, D, SH Chan, ET. Kang, KG. Neoh, Langmuir 23 (2007) 312-319.