Advanced gate technologies for state-of-the-art fTin AlGaN/GaN HEMTs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Chung, Jinwook W ^a   Kim, Tae Woo ^a   Palacios, Tomás ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; FREQUENCY PERFORMANCE; GAIN CUTOFF FREQUENCY; GATE LENGTH; GATE TECHNOLOGY; HIGH FREQUENCY PERFORMANCE; NEW TECHNOLOGIES; OXYGEN PLASMA TREATMENTS; SMALL SIGNAL;

CUTOFF FREQUENCY; ELECTRON DEVICES; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; OXYGEN; PLASMA APPLICATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79951849376     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703449     Document Type: Conference Paper

References (7)

1. T. Palacios et al., IEEE EDL, p. 781, 2005.
2. M. Micovic et al., IEDM, p. 425, 2006.
3. M. Higashiwaki et al., Appl. Phys. Express 1, 2008.
4. J. W. Chung et al., IEEE EDL, p. 195, 2010.
5. G. H. Jessen et al., IEEE TED, p. 2589, 2007.
6. M. C. Foisy et al., IEEE TED p. 871, 1988.
7. G. Dambrine et al., IEEE Trans. Microwave Theory, p. 1151, 1988.