An approach based on sensitivity analysis for the evaluation of process variability in nanoscale MOSFETs

IEEE Transactions on Electron Devices

Volumn 58, Issue 8, 2011, Pages 2266-2273

  Bonfiglio, Valentina ^a   Iannaccone, Giuseppe ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

Metal oxide semiconductor field effect transistor (MOSFET); mismatch; parameter fluctuations; variability

Indexed keywords

ANALYTICAL MODELING; COMPUTATIONAL COSTS; DEVICE DESIGN; DOUBLE-GATE MOSFETS; LINE EDGE ROUGHNESS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MISMATCH; MOS-FET; N-CHANNEL; NANO SCALE; NANOSCALE MOSFETS; NANOSCALE TRANSISTORS; PARAMETER FLUCTUATIONS; PARAMETER SENSITIVITIES; PROCESS VARIABILITY; RANDOM DOPANTS; SILICON ON INSULATOR; STATISTICAL SIMULATION; TECHNOLOGY COMPUTER AIDED DESIGN; ULTRA-THIN-BODY; VARIABILITY;

COMPUTER AIDED ANALYSIS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; DIELECTRIC DEVICES; ELECTRON BEAM LITHOGRAPHY; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SENSITIVITY ANALYSIS; SURFACE ROUGHNESS; TRANSISTORS;

MOSFET DEVICES;

EID: 79960847090     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2144985     Document Type: Article

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