Three-dimensional statistical modeling of the effects of the random distribution of dopants in deep sub-micron nMOSFETs

VLSI Design

Volumn 13, Issue 1-4, 2001, Pages 425-429

  Amirante, E ^a   Iannaccone, G ^a   Pellegrini, B ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

Deep submicron MOSFETs; Dopant fluctuations; Statistical modeling

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; POISSON DISTRIBUTION; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; STATISTICAL METHODS; THRESHOLD VOLTAGE;

DEEP SUB-MICRON TECHNOLOGY; SEMICONDUCTOR DOPANTS;

MOSFET DEVICES;

EID: 0035695725     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/2001/16196     Document Type: Conference Paper

References (10)

1. Three-dimensional "atomistic" simulation of discrete random dopant distribution effects in sub-0.1 μm MOSFETs
2. Modeling statistical dopant fluctuations in MOS transistors
3. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study
4. Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1 μm MOSFETs with epitaxial and δ-doped channels
5. Polysilicon gate enhancement of the random dopant induced threshold voltage fluctuations in sub - 100 nm MOSFETs with ultrathin gate oxide
6. Modeling of deep-submicrometer MOSFETs: Random impurity effects, threshold voltage shifts and gate capacitance attenuation
7. Monte Carlo particle-based simulations of deep submicron n-MOSFETs with real space treatment of electron - Electron interaction and electron-impurity treatment