Characteristics of hafnium silicate films deposited on Si by atomic layer deposition process

Transactions on Electrical and Electronic Materials

Volumn 12, Issue 3, 2011, Pages 127-130

  Lee, Jung Chan ^a   Kim, Kwang Sook ^a   Jeong, Seok Won ^a   Roh, Yonghan ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Annealing; Atomic layer deposition; HfSixOy; High k; Interfacial layer regrowth; Metal oxide semiconductor capacitor; O2

Indexed keywords

ATOMIC LAYER; HFSIXOY; HIGH-K; INTERFACIAL LAYER; METAL-OXIDE-SEMICONDUCTOR CAPACITORS;

ANNEALING; ATOMIC LAYER DEPOSITION; ATOMS; HAFNIUM; HAFNIUM COMPOUNDS; METAL ANALYSIS; SILICATES;

DEPOSITION;

EID: 79960738629     PISSN: 12297607     EISSN: 20927592     Source Type: Journal    
DOI: 10.4313/TEEM.2011.12.3.127     Document Type: Article

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