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Volumn 79, Issue 16, 2009, Pages

Electrical spin injection and detection in lateral all-semiconductor devices

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[No Author keywords available]

Indexed keywords


EID: 66349111126     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.165321     Document Type: Article
Times cited : (133)

References (33)
  • 3
    • 0035509039 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.64.184420
    • A. Fert and H. Jaffrès, Phys. Rev. B 64, 184420 (2001). 10.1103/PhysRevB.64.184420
    • (2001) Phys. Rev. B , vol.64 , pp. 184420
    • Fert, A.1    Jaffrès, H.2
  • 28
    • 66349103850 scopus 로고    scopus 로고
    • The way our device is fabricated (magnetic contacts are covered with gold) does not allow to pass the current along the contact. What is more, we could not perform AMR measurements on the wafer at all as the current path through the highly doped n+ layer made interpretation of such measurements very difficult.
    • The way our device is fabricated (magnetic contacts are covered with gold) does not allow to pass the current along the contact. What is more, we could not perform AMR measurements on the wafer at all as the current path through the highly doped n+ layer made interpretation of such measurements very difficult.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.