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Applied Physics Letters

Volumn 96, Issue 25, 2010, Pages

Internal electric field influence on tunneling anisotropic magnetoresistance in epitaxial ferromagnet/n-GaAs junctions

(4) Uemura, Tetsuya a Harada, Masanobu a Matsuda, Ken Ichi a Yamamoto, Masafumi a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANGULAR DEPENDENCE; DIFFERENTIAL CONDUCTANCES; GAAS; INTERNAL ELECTRIC FIELDS; SPIN ORBIT INTERACTIONS; TUNNEL RESISTANCE; TUNNELING ANISOTROPIC MAGNETORESISTANCES;

ANISOTROPY; ELECTRIC FIELDS; ELECTRIC RESISTANCE; GALLIUM ALLOYS; GALLIUM ARSENIDE; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; TUNNELING (EXCAVATION);

SEMICONDUCTING GALLIUM;

EID: 77954052506 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3456558 Document Type: Article

Times cited : (19)

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