Origin of the tunnel anisotropic magnetoresistance in Ga1-xMnxAs/ZnSe/Ga1- xMnxAs magnetic tunnel junctions of II-VI/III-V heterostructures

Physical Review Letters

Volumn 95, Issue 8, 2005, Pages

  Saito, H ^a   Yuasa, S ^a   Ando, K ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SPIN POLARIZATION; TUNNEL MAGNETORESISTANCE (TMR); TUNNELING CONDUCTANCE;

ANISOTROPY; GALLIUM COMPOUNDS; HETEROJUNCTIONS; POLARIZATION; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

MAGNETORESISTANCE;

EID: 27144454008     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.95.086604     Document Type: Article

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