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Volumn , Issue , 2011, Pages 886-892

Failure mechanism of 20μm pitch microjoint within a chip stacking architecture

Author keywords

[No Author keywords available]

Indexed keywords

CHIP STACKING; CROSS SECTIONAL IMAGE; CU PILLAR; DEPLETION ZONES; ELECTRONIC MICROSCOPES; ELEMENTAL DISTRIBUTION; ENERGY DISPERSIVE SPECTROMETERS; FAILURE MECHANISM; FAILURE RATE; GAP WIDTHS; INTERFACIAL FRACTURE; INTERMETALLIC PHASE; LIFE SPAN; MAPPING ANALYSIS; MICRO-BUMPS; MICRO-JOINT; MICROGAPS; NEW DESIGN; PEAK TEMPERATURES; SCANNING ACOUSTIC MICROSCOPES; SEED LAYER; SOLDER ALLOYS; SOLID-SOLID; TEMPERATURE CYCLING TESTS; TEST CONDITION; TEST RESULTS; UNDERFILL MATERIALS; UNDERFILLS;

EID: 79960404256     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2011.5898616     Document Type: Conference Paper
Times cited : (22)

References (19)
  • 2
    • 2442641371 scopus 로고    scopus 로고
    • 3D Interconnection and packaging: Impending reality or still a dream?
    • 15-19 February 2004; San Francisco, CA
    • E. Beyne, "3D Interconnection and packaging: impending reality or still a dream?" ISSCC, 15-19 February 2004; San Francisco, CA, pp. 138-145.
    • ISSCC , pp. 138-145
    • Beyne, E.1
  • 3
    • 51349132537 scopus 로고    scopus 로고
    • Through silicon via technology - Process and reliability for wafer-level 3D system integration
    • May 27-30
    • P. Ramm et al., "Through Silicon Via Technology - Process and Reliability for Wafer-Level 3D System Integration", Electronic Components and Technology Conference (ECTC), May 27-30, 2008.
    • (2008) Electronic Components and Technology Conference (ECTC)
    • Ramm, P.1
  • 4
    • 61649128557 scopus 로고    scopus 로고
    • 3D chip-stacking technology with through-silicon vias and low volume lead-free interconnections
    • K. Sakuma et al., "3D chip-stacking technology with through-silicon vias and low volume lead-free interconnections", IBM J. Res. & Dev. 52. No. 6, pp. 611-622, 2008.
    • (2008) IBM J. Res. & Dev. , vol.52 , Issue.6 , pp. 611-622
    • Sakuma, K.1
  • 5
    • 50249183988 scopus 로고    scopus 로고
    • New three-dimensional integration technology based on reconfigured wafer-on-wafer bonding technique
    • Dec
    • T. Fukushima et al., "New Three-Dimensional Integration Technology Based on Reconfigured Wafer-on-Wafer Bonding Technique, IEDM 2007. IEEE International, Dec. 2007, pp. 985-988.
    • (2007) IEDM 2007. IEEE International , pp. 985-988
    • Fukushima, T.1
  • 6
    • 51349143727 scopus 로고    scopus 로고
    • Characterization of stacked die using die-to-wafer integration for high yield and throughput
    • Orlando, FL, May
    • Sakuma, K. et al, "Characterization of Stacked Die using Die-to-Wafer Integration for High Yield and Throughput", Proc 58th Electronic Components and Technology Conf, Orlando, FL, May. 2008, pp. 18-23.
    • (2008) Proc 58th Electronic Components and Technology Conf , pp. 18-23
    • Sakuma, K.1
  • 7
  • 8
    • 64049094853 scopus 로고    scopus 로고
    • Kinetic study of eutectic Sn-3.5Ag and Electroplated Ni metallization in flip-chip solder joints
    • H. Y. Chen and C. Chen, "Kinetic study of eutectic Sn-3.5Ag and Electroplated Ni metallization in flip-chip solder joints", Electronic Materials and Packaging, pp. 262-267, 2008.
    • (2008) Electronic Materials and Packaging , pp. 262-267
    • Chen, H.Y.1    Chen, C.2
  • 9
    • 79960408350 scopus 로고    scopus 로고
    • High throughput chip on wafer assembly technology and metallurgical reactions of Pbfree micro-joints within a 3DIC Package
    • Jing-Yao Chang, et al., "High Throughput Chip on Wafer Assembly Technology and Metallurgical Reactions of Pbfree micro-joints within a 3DIC Package", ICEP 2010 proceedings, pp. 159-164.
    • ICEP 2010 Proceedings , pp. 159-164
    • Chang, J.1
  • 10
    • 0033902292 scopus 로고    scopus 로고
    • Adhesion and toughening mechanisms at underfill interfaces for flip-chip-on-organic-substrate packaging
    • Mar
    • X. Dai, M. V. Brillhart, M. Roesch, and P. S. Ho, "Adhesion and toughening mechanisms at underfill interfaces for flip-chip-on-organic-substrate packaging", IEEE Trans. Comp. Packag. Technol., vol. 23, pp. 117-127, Mar. 2000.
    • (2000) IEEE Trans. Comp. Packag. Technol. , vol.23 , pp. 117-127
    • Dai, X.1    Brillhart, M.V.2    Roesch, M.3    Ho, P.S.4
  • 11
    • 0034476758 scopus 로고    scopus 로고
    • A reliability and failure mode analysis of no flow underfill materials for low cost flip chip assembly
    • B. S. Smith, R. Thorpe, and D. F. Baldwin, "A reliability and failure mode analysis of no flow underfill materials for low cost flip chip assembly", Electronic Components Technology Conference, pp. 1719-1730, 2000.
    • (2000) Electronic Components Technology Conference , pp. 1719-1730
    • Smith, B.S.1    Thorpe, R.2    Baldwin, D.F.3
  • 12
    • 7244258739 scopus 로고    scopus 로고
    • Recent advances in flip-chip underfill: Materials, process, and reliability
    • Z. Zhang and C. P. Wong, "Recent advances in flip-chip underfill: materials, process, and reliability", IEEE Transactions on Advanced Packaging, pp. 515-524, 2004.
    • (2004) IEEE Transactions on Advanced Packaging , pp. 515-524
    • Zhang, Z.1    Wong, C.P.2
  • 16
    • 0016351044 scopus 로고
    • Gravity segregation in two-phase displacement processes
    • Allan Spivak, "Gravity Segregation in Two-Phase Displacement Processes", SPE Journal, 14(6), 619-632, 1974.
    • (1974) SPE Journal , vol.14 , Issue.6 , pp. 619-632
    • Spivak, A.1
  • 17
    • 0029292774 scopus 로고
    • Gravity segregation of complex intermetallic compounds in liquid Al-Si alloys
    • S. G. Shabestari and J. E. Gruzleski, "Gravity Segregation of Complex Intermetallic Compounds in Liquid Al-Si Alloys", Metallurgical and Materials Transaction A, 26, 999-1006, 1995.
    • (1995) Metallurgical and Materials Transaction A , vol.26 , pp. 999-1006
    • Shabestari, S.G.1    Gruzleski, J.E.2
  • 18
    • 69949125659 scopus 로고    scopus 로고
    • 4 in a Sn/Ni liquid/solid interfacial reaction
    • 4 in a Sn/Ni liquid/solid interfacial reaction", Acta Materialia, 57, 5196-5206, 2009.
    • (2009) Acta Materialia , vol.57 , pp. 5196-5206
    • Shen, J.1    Chan, Y.C.2    Liu, S.Y.3
  • 19
    • 0034271664 scopus 로고    scopus 로고
    • 4 intermediate phase in the Ni-Sn system
    • 4 Intermediate Phase in the Ni-Sn System", J. Materials Science, 35, 4601-4606, 2000.
    • (2000) J. Materials Science , vol.35 , pp. 4601-4606
    • Gur, D.1    Bamberger, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.