Characterization of thermo-mechanical stress and reliability issues for Cu-filled TSVs

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2011, Pages 1815-1821

  Malta, Dean ^a   Gregory, Christopher ^a   Lueck, Matthew ^a   Temple, Dorota ^a   Krause, Michael ^b   Altmann, Frank ^b   Petzold, Matthias ^b   Weatherspoon, Michael ^c   Miller, Joshua ^c  

^a RTI INTERNATIONAL   (United States)

^b FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM   (Germany)

^c Government Communications Systems Division ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTEGRATION; CROSS SECTION; DIELECTRIC LAYER; ELECTRON BACK-SCATTERED DIFFRACTION; ELEVATED TEMPERATURE; GRAIN SIZE; HIGH QUALITY; NONDESTRUCTIVE ANALYSIS; THERMO-MECHANICAL; THERMO-MECHANICAL STRESS; THROUGH SILICON VIAS; WAFER LEVEL PACKAGING; XRAY IMAGING;

CHARACTERIZATION; ELECTRONICS PACKAGING; GRAIN SIZE AND SHAPE; MICROSTRUCTURE; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; THREE DIMENSIONAL;

STRESSES;

EID: 79960402759     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2011.5898761     Document Type: Conference Paper

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