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Volumn 88, Issue 4, 2011, Pages 377-382

Scanning tunneling microscopy study of the interfacial bonding structures of Ga2O and In2O/In0.53Ga0.47As(0 0 1)

Author keywords

III V Compound semiconductor; MOSFET; Scanning tunneling microscopy; Semiconductor oxide interface; Surface reconstruction

Indexed keywords

DISORDERED STRUCTURES; EFFUSION CELLS; FLAT TERRACES; HIGH TEMPERATURE; III-V COMPOUND SEMICONDUCTOR; INTERFACIAL BONDING; MONOLAYER COVERAGE; MOSFET; ORDERED ISLANDS; ORDERED STRUCTURES; POST DEPOSITION ANNEALING; RUNNING-IN; SEMICONDUCTOR-OXIDE INTERFACE; STM/STS;

EID: 79751537883     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.10.023     Document Type: Conference Paper
Times cited : (7)

References (28)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.