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Volumn 96, Issue 8, 2004, Pages 4494-4499

Nonpolar a-plane p-type GaN and p-n junction diodes

(8) Chakraborty, Arpan a Xing, H a Craven, M D a,b Keller, S a Mates, T a Speck, J S a,c DenBaars, S P a,c Mishra, U K a,b,c

a University of California (United States)

b Lumileds Inc (United States)

c UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOLE CONCENTRATION; JUNCTION DIODES; P-N JUNCTIONS; TRIMETHYLGALLIUM;

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; LIGHT EMITTING DIODES; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SURFACE ROUGHNESS;

GALLIUM NITRIDE;

EID: 7544231713 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1790065 Document Type: Article

Times cited : (51)

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