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Journal of Electronic Materials

Volumn 38, Issue 4, 2009, Pages 538-544

Efficient outdiffusion of hydrogen from Mg-doped nitrides by NF 3 annealing

(5) Orita, Kenji a Kawaguchi, Masao a Kawaguchi, Yasutoshi a Takigawa, Shinichi a Ueda, Daisuke a

a PANASONIC CORPORATION (Japan)

Author keywords

Acceptor activation; Annealing ambient; GaN; Hydrogen; Magnesium; NF 3

Indexed keywords

ACCEPTOR ACTIVATION; CONVENTIONAL ANNEALING; DESORPTION OF HYDROGENS; FLUORINE RADICALS; GAN; GAN EPITAXIAL LAYERS; GAN-BASED LIGHT-EMITTING DIODES; HIGH CONCENTRATIONS; HYDROGEN ATOMS; LASER DIODES; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; MG-DOPED; NF 3; OUT DIFFUSIONS; RESIDUAL HYDROGENS;

ANNEALING; DESORPTION; EPITAXIAL LAYERS; FLUORINE; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MAGNESIUM; MAGNESIUM PRINTING PLATES; ORGANIC LIGHT EMITTING DIODES (OLED); SECONDARY BATTERIES; SEMICONDUCTING GALLIUM;

HYDROGEN;

EID: 61849094253 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-0681-y Document Type: Conference Paper

Times cited : (9)

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