Photo-enhanced chemical etched GaN LED on silicon substrate

Journal of Crystal Growth

Volumn 326, Issue 1, 2011, Pages 58-61

  Kim, Hong Yeol ^a   Mastro, Michael A ^b   Hite, Jennifer ^b   Eddy Jr , Charles R ^b   Kim, Jihyun ^a  

^a Korea University   (South Korea)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

A1. Etching; B1. Gallium nitride; B3. Light emitting diode

Indexed keywords

A1. ETCHING; AFM; B1. GALLIUM NITRIDE; DBR; ETCH PITS; GAN LEDS; GROWTH OF GAN; KOH ETCHING; KOH SOLUTION; LATTICE-MISMATCHED; LIGHT RAYS; PHOTOLUMINESCENCE INTENSITIES; PL INTENSITY; SCATTERING EFFECTS; SCATTERING EVENTS; SI SUBSTRATES; SILICON SUBSTRATES; SURFACE AREA; THREADING DISLOCATION; UV-LIGHT ILLUMINATION;

ETCHING; GALLIUM NITRIDE;

LIGHT EMITTING DIODES;

EID: 79960185375     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.01.051     Document Type: Conference Paper

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