Determination of dislocation density in MOVPE grown GaN layers using KOH defect etching

Journal of Crystal Growth

Volumn 310, Issue 5, 2008, Pages 955-958

  Wellmann, Peter J ^a   Sakwe, Sakwe A ^a   Oehlschläger, Felix ^a   Hoffmann, Veit ^b   Zeimer, Ute ^b   Knauer, Arne ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

A1. Defect etching; B1. GaN; B1. KOH

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL ANALYSIS; EPITAXIAL GROWTH; ETCHING; PARAMETER ESTIMATION;

DEFECT ETCHING; DISLOCATION NUMBERS; ROCKING CURVES;

DISLOCATIONS (CRYSTALS);

EID: 39249085325     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.064     Document Type: Article

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