Highquality In0.47Ga0.53N/GaN heterostructure on Si(111) and its application to MSM detector

Microelectronics International: An International Journal

Volumn 25, Issue 2, 2008, Pages 3-8

  Chuah, L S ^a   Hassan, Z ^a   Abu Hassan, H ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Electronic equipment and components; Radiofrequencies

Indexed keywords

EID: 43049116208     PISSN: 13565362     EISSN: None     Source Type: Journal    
DOI: 10.1108/13565360810875949     Document Type: Article

References (16)

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