Polarization effects in self-organized InGaN/GaN quantum dots grown by RF-plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2069-2072

  Zhang, M ^a   Moore, J ^a   Mi, Z ^a   Bhattacharya, P ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

A1. Polarization effect; A1. Self organized quantum dots; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

CRYSTAL GROWTH; ELECTRIC FIELDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDES; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; PLASMAS; POLARIZATION; SEMICONDUCTOR QUANTUM WIRES;

A1. POLARIZATION EFFECT; A1. SELF-ORGANIZED QUANTUM DOTS; A3. MOLECULAR BEAM EPITAXY; B1. NITRIDES; BLUE SHIFTS; DOT SIZES; ELECTRICAL FIELDS; EXCITATION POWER; EXCITATION POWER DENSITIES; HETEROSTRUCTURES; HIGH DOT DENSITIES; INGAN/GAN; MEASURED DATUM; PEAK POSITIONS; PHOTOLUMINESCENCE CHARACTERISTICS; QUANTUM DOTS; RF PLASMAS; SELF-ORGANIZED; THEORETICAL PREDICTIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 63349095776     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.042     Document Type: Article

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