Growth behaviour of InGaN/GaN self-assembled quantum dots with different growth conditions in horizontal MOCVD

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 4, 2009, Pages 797-801

  Jung, Woo Gwang ^a   Jang, Jae Min ^a,b   Choi, Seung Kyu ^a,c   Kim, Jin Yeol ^a  

^a Kookmin University   (South Korea)

^b MagnaChip Semiconductor Ltd   (South Korea)

^c Seoul Optodevices Co LTD   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOCRYSTALS; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE SPECTROSCOPY; SAPPHIRE; SEMICONDUCTOR ALLOYS; WIDE BAND GAP SEMICONDUCTORS;

EXPERIMENTAL CONDITIONS; GAN BUFFER LAYERS; GROWTH CONDITIONS; PHOTOLUMINESCENCE SPECTRUM; SAPPHIRE SUBSTRATES; SELF ASSEMBLED QUANTUM DOTS; STRANSKI-KRASTANOW GROWTH MODE; VOLMER-WEBER GROWTH MODE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70349426138     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200880585     Document Type: Conference Paper

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