Formation of self-organized GaN dots on Al0.11Ga0.89N by alternating supply of source precursors

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 6 B, 2004, Pages

  Ke, Wen Cheng ^a   Huang, Huai Ying ^a   Ku, Ching Shun ^a   Yen, Kao Hsi ^a   Lee, Ling ^a   Chen, Wei Kuo ^a   Chou, Wu Ching ^a   Lee, Ming Chih ^a   Chen, Wen Hsiung ^a   Lin, Wen Jen ^b   Cheng, Yi Cheng ^b   Cherng, Ya Tong ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Dot density; Flow rate modulation epitaxy; Ga metal; GaN dot; Volmer Weber

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FILM GROWTH; LIGHT EMITTING DIODES; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

DOT DENSITY; FLOW RATE MODULATION; GA METAL; GAN DOTS; VOLMER-WEBER;

GALLIUM NITRIDE;

EID: 4243145006     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l780     Document Type: Article

References (19)

1. H. K. Cho, J. Y. Lee, N. Sharma, C. J. Humphreys, G. M. Yang, C. S. Kim, J. H. Song and P. W. Yu: Appl. Phys. Lett. 79 (2001) 2594.
2. T. Akasaka, T. Nishida, Y. Taniyasu, M. Kasu and T. Makimoto: Appl. Phys. Lett. 83. (2003) 4140.
3. S. Tanaka, Jeong-Sik Lee, Peter Ramvall and Hiroaki Okagawa: Jpn. J. Appl. Phys. 42 (2003) L885.
4. B. Daudin, F. Widmann, G. Feuillet, Y. Samson, M. Arlery and J. L. Rouvière: Phys. Rev. B56 (1997) 7069.
5. M. Miyamura, K. Tachibana and Y. Arakawa: Appl. Phys. Lett. 80 (2002) 3937.
6. Satoru Tanaka, Sohachi Iwai and Yoshinobu Aoyagi: Appl. Phys. Lett. 69 (1996) 4096.
7. G. B. Stephenson, J. A. Eastman, C. Thompson, O. Auciello, L. J. Thompson, A. Munkholm, P. Fini, S. P. Denbaars and J. S. Speck: Appl. Phys. Lett. 74 (1999) 3326.
8. V. N. E. Robinson and J. L. Robins: Thin Solid Films 20 (1974) 155.
9. Tosja Zywietz, Jörg Neugebauer and Matthias Scheffler: Appl. Phys. Lett. 73 (1998) 487.
10. S. Guha, N. A. Bojarczuk and D. W. Kisker: Appl. Phys. Lett. 69 (1996) 2879.
11. Naoki Kobayashi, Toshiki Makimoto and Yoshiji Horikoshi: Jpn. J. Appl. Phys. 24 (1985) L962.
12. Keith R. Evans, Ting Lei and Charles R. Jones: Solid-State Electron. 41 (1997) 339.
13. D. J. Eaglesham and M. Cerullo: Phys. Rev. Lett. 64 (1990) 1943.
14. D. Winau, R. Koch, A. Führmann and K. H. Rieder: J. Appl. Phys. 70 (1991) 3081.
15. William G. Perry, M. B. Bremser, T. Zheleva, K. J. Linthicum and R. F. Davis: Thin Solid Films 324 (1998) 107.
16. L. Z. Mezey and J. Giber: Jpn. J. Appl. Phys. 21 (1982) 1569.
17. Kazuo Nakajima, Toru Ujihara, Satoru Miyashita and Gen Sazaki: J. Appl. Phys. 89 (2001) 146.
18. K. Gschneidner, Jr.: Solid State Phys. 16 (1964) 275.
19. X. G. Gong, Guido L. Chiarotti, M. Parrinello and E. Tosatti: Phys. Rev. B43 (1991) 14277.