Evaluation of two-dimensional strain distribution by STEM/NBD

Ultramicroscopy

Volumn 111, Issue 8, 2011, Pages 995-998

  Uesugi, Fumihiko ^a   Hokazono, Akira ^a   Takeno, Shiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

ADF STEM; Energy filter; NBD; Silicide; Strain measurement

Indexed keywords

ADF-STEM; CHANNEL REGION; ENERGY FILTER; MOS-FET; MOSFETS; NANOBEAM ELECTRON DIFFRACTION; NBD; NUMERICAL PROCESSING; P-MOSFETS; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SOURCE/DRAIN REGIONS; STEM FUNCTIONS; STRAIN DISTRIBUTIONS; STRAIN MAPPING;

DIFFRACTION; MOSFET DEVICES; SILICIDES; TRANSMISSION ELECTRON MICROSCOPY;

STRAIN;

COBALT SILICIDE; NICKEL SILICIDE; SILICON DERIVATIVE; UNCLASSIFIED DRUG;

ACCURACY; ARTICLE; CONTROLLED STUDY; DEVICE; DIFFRACTION; ELECTRON DIFFRACTION; ENERGY FILTER; FILTER; MEASUREMENT; MEASUREMENT ERROR; NANO BEAM ELECTRON DIFFRACTION; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTOR;

EID: 79960024826     PISSN: 03043991     EISSN: 18792723     Source Type: Journal    
DOI: 10.1016/j.ultramic.2011.01.035     Document Type: Article

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