Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED

Journal of Electron Microscopy

Volumn 53, Issue 1, 2004, Pages 11-19

  Akaogi, Takayuki ^a,b   Tsuda, Kenji ^a   Terauchi, Masami ^a   Tanaka, Michiyoshi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b ASAHI KASEI CORPORATION   (Japan)

Author keywords

Convergent beam electron diffraction; InAs; Lattice parameter determination; Lattice strain

Indexed keywords

GALLIUM; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; COMPARATIVE STUDY; CRYSTALLIZATION; CRYSTALLOGRAPHY; ELECTRON MICROSCOPY; METHODOLOGY; SEMICONDUCTOR;

ARSENICALS; CRYSTALLIZATION; CRYSTALLOGRAPHY; GALLIUM; INDIUM; MICROSCOPY, ELECTRON; SEMICONDUCTORS;

SIGE;

CRYSTAL SYMMETRY; ELECTRON DIFFRACTION; GALLIUM ARSENIDE; INDIUM ARSENIDE; LATTICE CONSTANTS; NARROW BAND GAP SEMICONDUCTORS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SI-GE ALLOYS; SUBSTRATES;

CONVERGENT BEAMS; CONVERGENT-BEAM ELECTRON DIFFRACTION; ELECTRON DIFFRACTION PATTERN; GAAS SUBSTRATES; HIGHER ORDER LAUE ZONES; LATTICE PARAMETER DETERMINATION; LATTICE STRAIN; LATTICE SYMMETRY; MIRROR SYMMETRY; PARAMETER DETERMINATION;

III-V SEMICONDUCTORS;

EID: 1642405491     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/53.1.11     Document Type: Article

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