Ohmic contacts to n-GaN formed by ion-implanted Si into p-GaN

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7381, Issue , 2009, Pages

  Bao, Xichang ^a   Xu, Jintong ^a   Zhang, Wenjing ^a   Wang, Ling ^a   Chu, Kaihui ^a   Li, Chao ^a   Li, Xiangyang ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

GaN; I V characteristics; Ion implantation; Specific contact resistance; Transmission line method (TLM)

Indexed keywords

AFTER HIGH TEMPERATURE; ANNEALING TECHNIQUES; ANNEALING TEMPERATURES; ELECTRON BEAM EVAPORATION; GAN; GAN BUFFER LAYERS; GAN FILM; IMPLANTED SAMPLES; IV CHARACTERISTICS; LAYER STRUCTURES; METAL-ORGANIC; METALLIZATIONS; MG-DOPED; MOCVD; MULTILAYER ELECTRODES; P-TYPE GAN; RECTIFYING BEHAVIORS; SAPPHIRE SUBSTRATES; SPECIFIC CONTACT RESISTANCES; TRANSMISSION LINE METHODS;

ANNEALING; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; CONTACT RESISTANCE; CORUNDUM; DISTILLATION; ELECTRIC CONTACTORS; ELECTRIC LINES; GALLIUM NITRIDE; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; ION BOMBARDMENT; ION IMPLANTATION; OHMIC CONTACTS; ORGANIC CHEMICALS; SECONDARY BATTERIES; SEMICONDUCTING GALLIUM; SENSORS; SILICON ALLOYS; TRANSMISSION LINE THEORY;

GALLIUM ALLOYS;

EID: 70450028525     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.835500     Document Type: Conference Paper

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