AlGaN/GaN high electron mobility transistors with implanted ohmic contacts

Thin Solid Films

Volumn 515, Issue 10, 2007, Pages 4476-4479

  Wang, H T ^a   Tan, L S ^a   Chor, E F ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

AlGaN GaN HEMTs; Contact resistance; DC characteristics; Implantation

Indexed keywords

ENCAPSULATION; GALLIUM NITRIDE; ION IMPLANTATION; OHMIC CONTACTS; RAPID THERMAL ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS;

CONTACT RESISTANCE; DRAIN REGIONS; HIGHER CURRENT DRIVES; SCHOTTKY GATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33847041152     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.133     Document Type: Article

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